PMDT290 Series

Catalog

MOSFET 2N-CH 20V 0.8A SOT666

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Qualification	Mounting Type	Vgs(th) (Max) @ Id	Grade	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power - Max	Rds On (Max) @ Id, Vgs	FET Feature
Freescale Semiconductor - NXP PMDT290UNEYL	500 mW	20 V	SOT-563 SOT-666	800 mA	SOT-666	2 N-Channel (Dual)	83 pF	0.68 nC	AEC-Q101	Surface Mount	950 mV	Automotive	MOSFET (Metal Oxide)	-55 °C	150 °C	380 mOhm
Freescale Semiconductor - NXP PMDT290UCEH		20 V	SOT-563 SOT-666	550 mA 800 mA	SOT-666	N and P-Channel Complementary	83 pF 87 pF	0.68 nC 1.14 nC	AEC-Q101	Surface Mount	1.3 V 950 mV	Automotive	MOSFET (Metal Oxide)	-55 °C	150 °C		1.09 W 330 mW	380 mOhm 850 mOhm
Freescale Semiconductor - NXP PMDT290UCE,115	500 mW	20 V	SOT-563 SOT-666	550 mA 800 mA	SOT-666	N and P-Channel	83 pF	0.68 nC	AEC-Q101	Surface Mount	950 mV	Automotive	MOSFET (Metal Oxide)	-55 °C	150 °C	380 mOhm			Logic Level Gate