PMDT290 Series

20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

Catalog

20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Technology	Package / Case	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	FET Feature
Nexperia USA Inc. PMDT290UNEYL	SOT-666	800 mA	Automotive	83 pF	AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	950 mV	2 N-Channel (Dual)	0.68 nC	380 mOhm	Surface Mount	150 °C	-55 °C	500 mW	20 V
Nexperia USA Inc. PMDT290UCEH	SOT-666		Automotive		AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	1.3 V 950 mV	N and P-Channel Complementary	0.68 nC 1.14 nC	380 mOhm 850 mOhm	Surface Mount	150 °C	-55 °C		20 V	550 mA	800 mA	83 pF 87 pF	1.09 W 330 mW
Nexperia USA Inc. PMDT290UCE,115	SOT-666	550 mA 800 mA	Automotive	83 pF	AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	950 mV	N and P-Channel	0.68 nC	380 mOhm	Surface Mount	150 °C	-55 °C	500 mW	20 V					Logic Level Gate

Catalog

20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.