Discrete Semiconductor Products

SI4943BDY-T1-E3

LTB

MOSFET 2P-CH 20V 6.3A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2P-CH 20V 6.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4943BDY-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Feature	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4943CDY-T1-E3	62 nC	3.1 W	1945 pF	20 V	Logic Level Gate	MOSFET (Metal Oxide)	3 V	8-SOIC	150 °C	-50 °C	8 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	2 P-Channel	19.2 mOhm
Vishay General Semiconductor - Diodes Division SI4943BDY-T1-E3	25 nC	1.1 W		20 V	Logic Level Gate	MOSFET (Metal Oxide)	3 V	8-SOIC	150 °C	-55 °C	6.3 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	2 P-Channel		19 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 6.3A 1.1W Surface Mount 8-SOIC

Technical documentation and resources