SI4943 Series

Catalog

MOSFET 2P-CH 20V 8A 8SOIC

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Feature	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4943CDY-T1-E3	62 nC	3.1 W	1945 pF	20 V	Logic Level Gate	MOSFET (Metal Oxide)	3 V	8-SOIC	150 °C	-50 °C	8 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	2 P-Channel	19.2 mOhm
Vishay General Semiconductor - Diodes Division SI4943BDY-T1-E3	25 nC	1.1 W		20 V	Logic Level Gate	MOSFET (Metal Oxide)	3 V	8-SOIC	150 °C	-55 °C	6.3 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	2 P-Channel		19 mOhm