Discrete Semiconductor Products
FDMS4435BZ
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 30 V, 18 A, 0.015 OHM, POWER 56, SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
FDMS4435BZ
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 30 V, 18 A, 0.015 OHM, POWER 56, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS4435BZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A, 18 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 39 W |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 532 | $ 0.56 | |
| 532 | $ 0.56 | |||
| Cut Tape (CT) | 1 | $ 1.30 | ||
| 1 | $ 1.30 | |||
| 10 | $ 1.06 | |||
| 10 | $ 1.06 | |||
| 100 | $ 0.83 | |||
| 100 | $ 0.83 | |||
| 500 | $ 0.70 | |||
| 500 | $ 0.70 | |||
| 1000 | $ 0.57 | |||
| 1000 | $ 0.57 | |||
| Digi-Reel® | 1 | $ 1.30 | ||
| 1 | $ 1.30 | |||
| 10 | $ 1.06 | |||
| 10 | $ 1.06 | |||
| 100 | $ 0.83 | |||
| 100 | $ 0.83 | |||
| 500 | $ 0.70 | |||
| 500 | $ 0.70 | |||
| 1000 | $ 0.57 | |||
| 1000 | $ 0.57 | |||
| Tape & Reel (TR) | 3000 | $ 0.54 | ||
| 3000 | $ 0.54 | |||
| 6000 | $ 0.51 | |||
| 6000 | $ 0.51 | |||
| 9000 | $ 0.49 | |||
| 9000 | $ 0.49 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.05 | |
| 10 | $ 1.47 | |||
| 25 | $ 1.35 | |||
| 50 | $ 1.25 | |||
| 100 | $ 1.14 | |||
| 250 | $ 1.05 | |||
| ON Semiconductor | N/A | 1 | $ 0.24 | |
Description
General part information
FDMS4435BZ Series
This P-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources