Discrete Semiconductor Products

FAM65CR51ADZ1

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POWER INTEGRATED MODULE (PIM) BOOST CONVERTER STAGE FOR MULTIPHASE AND SEMI-BRIDGELESS PFC

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Discrete Semiconductor Products

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POWER INTEGRATED MODULE (PIM) BOOST CONVERTER STAGE FOR MULTIPHASE AND SEMI-BRIDGELESS PFC

Technical Specifications

Parameters and characteristics for this part

Specification	FAM65CR51ADZ1

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs [Max]	123 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4864 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-SSIP Exposed Pad, Formed Leads
Power - Max [Max]	189 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	APMCD-B16
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5 V

Power Integrated Module (PIM) Boost Converter Stage for Multiphase and Semi-Bridgeless PFC

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Grade
ON Semiconductor FAM65CR51ADZ1	2 N-Channel	-55 °C	150 °C	12-SSIP Exposed Pad Formed Leads	5 V	APMCD-B16	Silicon Carbide (SiC)	Through Hole	4864 pF	189 W	41 A	AEC-Q101	123 nC	650 V	51 mOhm	Automotive

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General part information

Power integrated MOSFET module with boost converter stage for multi-phase and semi-bridgeless power factor correction (PFC) with Diodes

Technical documentation and resources