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STMicroelectronics-STGYA120M65DF2AG IGBT Chip Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) Max247 Tube Automotive AEC-Q101
Discrete Semiconductor Products

STGYA120M65DF2AG

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STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 120 A LOW LOSS IN A MAX247 LONG LEADS PACKAGE

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DocumentsTN1378+7
STMicroelectronics-STGYA120M65DF2AG IGBT Chip Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) Max247 Tube Automotive AEC-Q101
Discrete Semiconductor Products

STGYA120M65DF2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 120 A LOW LOSS IN A MAX247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsTN1378+7

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGYA120M65DF2AG
Current - Collector (Ic) (Max) [Max]160 A
Current - Collector Pulsed (Icm)360 A
Gate Charge420 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]625 W
Reverse Recovery Time (trr)202 ns
Supplier Device PackageMAX247™
Switching Energy4.41 mJ, 1.8 mJ
Td (on/off) @ 25°C [custom]66 ns
Td (on/off) @ 25°C [custom]185 ns
Test Condition400 V, 4.7 Ohm, 120 A, 15 V
Vce(on) (Max) @ Vge, Ic2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 9.00

Description

General part information

STGYA120M65DF2AG Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.