Specification	SSM6H19NU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	6-UDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

SSM6H19NU Series

Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology
Toshiba Semiconductor and Storage SSM6H19NU,LF	1.8 V	8 V	6-UDFN Exposed Pad	2 A	2.2 nC	12 V	150 °C	130 pF	N-Channel	6-UDFN (2x2)	Surface Mount	1.2 V	40 V	185 mOhm	1 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.50

General part information

Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)

Technical documentation and resources