SSM6H19NU Series
Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)
Beta
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Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, 40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.8 V | 8 V | 6-UDFN Exposed Pad | 2 A | 2.2 nC | 12 V | 150 °C | 130 pF | N-Channel | 6-UDFN (2x2) | Surface Mount | 1.2 V | 40 V | 185 mOhm | 1 W | MOSFET (Metal Oxide) |