Discrete Semiconductor Products

GP3T080A120H

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SIC MOSFETS GEN3 1200V, 80MOHM SIC MOSFET, TO-247-4L

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Discrete Semiconductor Products

Active

SIC MOSFETS GEN3 1200V, 80MOHM SIC MOSFET, TO-247-4L

Technical Specifications

Parameters and characteristics for this part

Specification	GP3T080A120H

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1351 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	147 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
SemiQ GP3T080A120H	100 mOhm	4 V	TO-247-4	147 W	Through Hole	1351 pF	N-Channel	TO-247-4	1.2 kV	175 °C	-55 °C	32 A	18 V	53 nC

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General part information

SIC MOSFETS GEN3 1200V, 80MOHM SIC MOSFET, TO-247-4L

Technical documentation and resources