Discrete Semiconductor Products

APT30GS60BRDQ2G

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IGBT NPT 600V 54A TO247

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Discrete Semiconductor Products

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IGBT NPT 600V 54A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT30GS60BRDQ2G

Current - Collector (Ic) (Max)	54 A
Current - Collector Pulsed (Icm)	113 A
Gate Charge	145 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	25 ns
Supplier Device Package	TO-247 [B]
Switching Energy	570 µJ
Td (on/off) @ 25°C	360 ns
Td (on/off) @ 25°C	16 ns
Test Condition	15 V, 9.1 Ohm, 30 A, 400 V
Vce(on) (Max) @ Vge, Ic	3.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Reverse Recovery Time (trr)	Test Condition	Package / Case	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max)	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Current - Collector Pulsed (Icm)	Switching Energy
Microchip Technology APT30GS60BRDQ2G	25 ns	9.1 Ohm 15 V 30 A 400 V	TO-247-3	3.15 V	360 ns	16 ns	TO-247 [B]	145 nC	-55 °C	150 °C	54 A	NPT	600 V	Through Hole	250 W	113 A	570 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 54 A 250 W Through Hole TO-247 [B]

Technical documentation and resources