Discrete Semiconductor Products

SSM3J108TU(TE85L)

Obsolete

MOSFET P-CH 20V 1.8A UFM

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.8A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J108TU(TE85L)

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	158 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J108TU(TE85L)	P-Channel	UFM	MOSFET (Metal Oxide)	250 pF	1.8 A	158 mOhm	150 °C	1.8 V 4 V	20 V	8 V	500 mW	Surface Mount	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 20 V 1.8A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources