SSM3J108 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM
| Part | FET Type | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | P-Channel | UFM | MOSFET (Metal Oxide) | 250 pF | 1.8 A | 158 mOhm | 150 °C | 1.8 V 4 V | 20 V | 8 V | 500 mW | Surface Mount | 1 V |