Discrete Semiconductor Products

RJK2009DPM-00#T0

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MOSFET N-CH 200V 40A TO3PFM

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Discrete Semiconductor Products

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MOSFET N-CH 200V 40A TO3PFM

Technical Specifications

Parameters and characteristics for this part

Specification	RJK2009DPM-00#T0

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-3PFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation RJK2009DPM-00#T0	10 V	2900 pF	60 W	TO-3PFM	Through Hole	N-Channel	40 A	36 mOhm	30 V	TO-220-3 Full Pack	200 V	MOSFET (Metal Oxide)	72 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 40A (Ta) 60W (Tc) Through Hole TO-3PFM

Technical documentation and resources