RJK2009 Series
Manufacturer: Renesas Electronics Corporation
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MOSFET N-CH 200V 40A TO3PFM
| Part | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 10 V | 2900 pF | 60 W | TO-3PFM | Through Hole | N-Channel | 40 A | 36 mOhm | 30 V | TO-220-3 Full Pack | 200 V | MOSFET (Metal Oxide) | 72 nC |