RJK2009 Series
Manufacturer: Renesas Electronics Corporation
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MOSFET N-CH 200V 40A TO3PFM
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | TO-220-3 Full Pack | 10 V | N-Channel | 200 V | Through Hole | 72 nC | MOSFET (Metal Oxide) | 60 W | 36 mOhm | TO-3PFM | 2900 pF | 30 V | 40 A |