Discrete Semiconductor Products

SCS220ANTRL

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650V, 20A, SMD, SILICON-CARBIDE (SIC) SBD

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Discrete Semiconductor Products

Active

650V, 20A, SMD, SILICON-CARBIDE (SIC) SBD

Technical Specifications

Parameters and characteristics for this part

Specification	SCS220ANTRL

Capacitance @ Vr, F	730 pF
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

650V, 20A, SMD, Silicon-carbide (SiC) SBD

Part	Speed	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Technology
Rohm Semiconductor SCS220ANTRL	500 mA	TO-263L	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	730 pF	400 µA	175 °C	0 ns	1.55 V	Surface Mount	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1000	$ 7.10

General part information

Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)

Technical documentation and resources