Catalog
650V, 20A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 20A, SMD, Silicon-carbide (SiC) SBD
650V, 20A, SMD, Silicon-carbide (SiC) SBD
| Part | Speed | Supplier Device Package | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 500 mA | TO-263L | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 730 pF | 400 µA | 175 °C | 0 ns | 1.55 V | Surface Mount | SiC (Silicon Carbide) Schottky |