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STD11N60DM2
Discrete Semiconductor Products

STD11N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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STD11N60DM2
Discrete Semiconductor Products

STD11N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD11N60DM2
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]16.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]614 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs420 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1288$ 1.86
NewarkEach (Supplied on Cut Tape) 1$ 2.64
10$ 1.82
25$ 1.66
50$ 1.51
100$ 1.35
250$ 1.25
500$ 1.15
1000$ 1.08

Description

General part information

STD11N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources