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HMC396-SX
RF and Wireless

HMC396-SX

LTB
Analog Devices Inc./Maxim Integrated

INGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 8 GHZ

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HMC396-SX
RF and Wireless

HMC396-SX

LTB
Analog Devices Inc./Maxim Integrated

INGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 8 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC396-SX
Current - Supply56 mA
Frequency [Max]8 GHz
Frequency [Min]0 Hz
Gain12 dBi
Mounting TypeSurface Mount
Noise Figure6 dB
P1dB14 dBm
Package / CaseDie
RF TypeGeneral Purpose
Supplier Device PackageDie
Test Frequency [Max]4 GHz
Test Frequency [Min]0 Hz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 2$ 85.36<3d
4$ 82.11
6$ 80.29
10$ 78.09
14$ 76.70
20$ 75.26
50$ 71.77
100$ 69.31

Description

General part information

HMC396-DIE Series

The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply.The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).ApplicationsMicrowave & VSAT RadiosTest EquipmentMilitary EW, ECM, C³ISpace Telecom