HMC396
LTBINGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 8 GHZ
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HMC396
LTBINGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 8 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC396 |
|---|---|
| Current - Supply | 56 mA |
| Frequency [Max] | 8 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 12 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 14 dBm |
| Package / Case | Die |
| RF Type | VSAT |
| Supplier Device Package | Die |
| Test Frequency [Max] | 4 GHz |
| Test Frequency [Min] | 0 Hz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 50 | $ 32.25 | <3d |
| 100 | $ 31.09 | |||
| 150 | $ 30.45 | |||
| 250 | $ 29.67 | |||
Description
General part information
HMC396-DIE Series
The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply.The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).ApplicationsMicrowave & VSAT RadiosTest EquipmentMilitary EW, ECM, C³ISpace Telecom
Documents
Technical documentation and resources