Specification	PBSS4112PAN-QX

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	240
Frequency - Transition	120 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q101
Supplier Device Package	6-HUSON (2x2)
Transistor Type	2 NPN
Vce Saturation (Max) @ Ib, Ic	260 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

PBSS4112PAN-Q Series

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Part	Operating Temperature	Package / Case	Current - Collector Cutoff (Max) [Max]	Qualification	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Grade	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package
Nexperia USA Inc. PBSS4112PAN-QX	150 °C	6-UFDFN Exposed Pad	100 nA	AEC-Q101	510 mW	240	Surface Mount	1 A	260 mV	Automotive	2 NPN	120 V	120 MHz	6-HUSON (2x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.24

General part information

NPN/NPN low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources