Catalog
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Description
AI
NPN/NPN low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
| Part | Operating Temperature | Package / Case | Current - Collector Cutoff (Max) [Max] | Qualification | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Grade | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | 6-UFDFN Exposed Pad | 100 nA | AEC-Q101 | 510 mW | 240 | Surface Mount | 1 A | 260 mV | Automotive | 2 NPN | 120 V | 120 MHz | 6-HUSON (2x2) |