Specification	PSMNR56-25YLEX

Current - Continuous Drain (Id) @ 25°C	320 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12137 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	0.63 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

PSMNR56-25YLE Series

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Supplier Device Package	Power Dissipation (Max)	Package / Case
Nexperia USA Inc. PSMNR56-25YLEX	175 °C	-55 °C	0.63 mOhm	MOSFET (Metal Oxide)	7 V 10 V	190 nC	20 V	320 A	25 V	2.2 V	12137 pF	Surface Mount	N-Channel	LFPAK56 Power-SO8	333 W	SOT-1023 4-LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.60

Description

General part information

PSMNR56-25YLE Series

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.