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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8120 |
|---|---|
| Current - Supply | 250 mA |
| Frequency [Max] | 76 GHz |
| Frequency [Min] | 71 GHz |
| Gain | 22 dBi |
| Mounting Type | Surface Mount |
| P1dB | 21 dBm |
| Package / Case | Die |
| Supplier Device Package | Die |
| Test Frequency [Max] | 76 GHz |
| Test Frequency [Min] | 71 GHz |
| Voltage - Supply | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HMC8120 Series
The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSATwhile requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.05 mil thick × 7 mil long ribbon on each port.ApplicationsE-band communication systemsHigh capacity wireless backhaul radio systemsTest and measurement
Documents
Technical documentation and resources