Discrete Semiconductor Products

GAN039-650NTBJ

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650 V, 33 MOHM GALLIUM NITRIDE (GAN) FET IN A CCPAK1212I PACKAGE

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DocumentsWhitepaper: GaN need for efficient conversion (Japanese)Probing considerations for fast switching applications +13

Discrete Semiconductor Products

GAN039-650NTBJ

Active

Nexperia USA Inc.

650 V, 33 MOHM GALLIUM NITRIDE (GAN) FET IN A CCPAK1212I PACKAGE

Deep-Dive with AI

DocumentsWhitepaper: GaN need for efficient conversion (Japanese)Probing considerations for fast switching applications +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GAN039-650NTBJ

Current - Continuous Drain (Id) @ 25°C	58.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Exposed Pad, 12-BESOP
Package / Case [x]	9.4 mm
Package / Case [x]	0.37 in
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	CCPAK1212i
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.6 V

GAN039-650NTB Series

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [x]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	FET Type
Nexperia USA Inc. GAN039-650NTBJ	150 °C	-55 °C	58.5 A	10 V	250 W	CCPAK1212i	650 V	GaNFET (Gallium Nitride)	39 mOhm	4.6 V	1980 pF	12-BESOP Exposed Pad	9.4 mm	0.37 in	26 nC	Surface Mount	20 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	723	$ 17.66

Description

General part information

GAN039-650NTB Series

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.