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TO-220-3
Discrete Semiconductor Products

STGP15H60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED

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TO-220-3
Discrete Semiconductor Products

STGP15H60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP15H60DF
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)60 A
Gate Charge81 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]115 W
Reverse Recovery Time (trr)103 ns
Supplier Device PackageTO-220
Switching Energy207 µJ, 136 µJ
Td (on/off) @ 25°C24.5 ns, 118 ns
Test Condition400 V, 15 V, 10 Ohm, 15 A
Vce(on) (Max) @ Vge, Ic [Max]2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 927$ 2.42
Tube 1$ 2.03
50$ 1.63
100$ 1.34
500$ 1.14
1000$ 0.96
2000$ 0.91
5000$ 0.88
10000$ 0.85
NewarkEach 1$ 2.88
10$ 1.45
100$ 1.38
500$ 1.26
1000$ 1.24
3000$ 1.18
5000$ 1.16

Description

General part information

STGP15 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.