Discrete Semiconductor Products

IPG20N04S4L08AATMA1

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INFINEON’S IPG20N04S4L-08A DUAL N-CHANNEL LOGIC LEVEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Discrete Semiconductor Products

IPG20N04S4L08AATMA1

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INFINEON

INFINEON’S IPG20N04S4L-08A DUAL N-CHANNEL LOGIC LEVEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPG20N04S4L08AATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	39 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3050 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	54 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.2 mOhm
Supplier Device Package	PG-TDSON-8-10
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

IPG20N Series

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Power - Max [Max]	Supplier Device Package	FET Feature	Grade	Current - Continuous Drain (Id) @ 25°C	Configuration	Qualification	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPG20N06S2L35ATMA1	2 V	790 pF	MOSFET (Metal Oxide)	175 °C	-55 °C	23 nC	55 V	35 mOhm	8-PowerVDFN	65 W	PG-TDSON-8-4	Logic Level Gate	Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount
INFINEON IPG20N06S2L50ATMA1	2 V	560 pF	MOSFET (Metal Oxide)	175 °C	-55 °C	17 nC	55 V	50 mOhm	8-PowerVDFN	51 W	PG-TDSON-8-4	Logic Level Gate		20 A	2 N-Channel (Dual)		Surface Mount
INFINEON IPG20N06S3L-35	2.2 V		MOSFET (Metal Oxide)	175 °C	-55 °C	23 nC	55 V	35 mOhm	8-PowerVDFN	30 W	PG-TDSON-8-4	Logic Level Gate		20 A	2 N-Channel (Dual)		Surface Mount	1730 pF
INFINEON IPG20N04S4L07ATMA1	2.2 V		MOSFET (Metal Oxide)	175 °C	-55 °C	50 nC	40 V	7.2 mOhm	8-PowerVDFN	65 W	PG-TDSON-8-4	Logic Level Gate	Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount	3980 pF
INFINEON IPG20N06S2L65AUMA1
INFINEON IPG20N04S4L08ATMA1	2.2 V		MOSFET (Metal Oxide)	175 °C	-55 °C	39 nC	40 V	8.2 mOhm	8-PowerVDFN	54 W	PG-TDSON-8-4	Logic Level Gate	Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount	3050 pF
INFINEON IPG20N10S436AATMA1	3.5 V	990 pF	MOSFET (Metal Oxide)	175 °C	-55 °C	15 nC	100 V		8-PowerVDFN	43 W	PG-TDSON-8-10		Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount Wettable Flank		36 mOhm
INFINEON IPG20N04S4L08AATMA1	2.2 V		MOSFET (Metal Oxide)	175 °C	-55 °C	39 nC	40 V	8.2 mOhm	8-PowerVDFN	54 W	PG-TDSON-8-10	Logic Level Gate	Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount Wettable Flank	3050 pF
INFINEON IPG20N04S412AATMA1	4 V		MOSFET (Metal Oxide)	175 °C	-55 °C		40 V	12.2 mOhm	8-PowerVDFN	41 W	PG-TDSON-8-10		Automotive	20 A	2 N-Channel (Dual)	AEC-Q101	Surface Mount Wettable Flank	1470 pF		18 nC
INFINEON IPG20N04S408ATMA1	4 V		MOSFET (Metal Oxide)	175 °C	-55 °C		40 V	7.6 mOhm	8-PowerVDFN	65 W	PG-TDSON-8-4			20 A	2 N-Channel (Dual)		Surface Mount	2940 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.58
		10	$ 1.29
		100	$ 1.01
		500	$ 0.85
		1000	$ 0.69
		2000	$ 0.65
	Digi-Reel®	1	$ 1.58
		10	$ 1.29
		100	$ 1.01
		500	$ 0.85
		1000	$ 0.69
		2000	$ 0.65
	N/A	3925	$ 1.94
	Tape & Reel (TR)	5000	$ 0.59

Description

General part information

IPG20N Series

Mosfet Array 40V 20A 54W Surface Mount, Wettable Flank PG-TDSON-8-10

Documents

Technical documentation and resources

No documents available