Discrete Semiconductor Products

IPP60R160P7XKSA1

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MOSFET, N-CH, 600V, 20A, 150DEG C, 81W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 600V, 20A, 150DEG C, 81W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R160P7XKSA1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1317 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	81 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Technology	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPP60R160P7XKSA1	1317 pF	Through Hole	160 mOhm	150 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	20 V	TO-220-3	20 A	650 V	PG-TO220-3-1	81 W	4 V	10 V	31 nC
INFINEON IPP60R160P6XKSA1		Through Hole	160 mOhm	150 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	20 V	TO-220-3	23.8 A	600 V	PG-TO220-3		4.5 V	10 V	44 nC	2080 pF	176 W
INFINEON IPP60R160C6XKSA1	1660 pF	Through Hole	160 mOhm	150 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	20 V	TO-220-3	23.8 A	600 V	PG-TO220-3			10 V			176 W	75 nC	3.5 V

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General part information

N-Channel 650 V 20A (Tc) 81W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources