Discrete Semiconductor Products
IPP60R160P6XKSA1
ActiveINFINEON
COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 160 MOHM; PRICE/PERFORMANCE
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Discrete Semiconductor Products
IPP60R160P6XKSA1
ActiveINFINEON
COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 160 MOHM; PRICE/PERFORMANCE
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP60R160P6XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2080 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 176 W |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP60R160 Series
InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Documents
Technical documentation and resources
