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Discrete Semiconductor Products

JAN2N1711

Unknown
Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

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Search across all available documentation for this part.

Discrete Semiconductor Products

JAN2N1711

Unknown
Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N1711
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]800 mW
QualificationMIL-PRF-19500/225
Supplier Device PackageTO-5
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 500$ 193.75
Microchip DirectN/A 1$ 58.24
NewarkEach 100$ 54.08
500$ 52.00

Description

General part information

JAN2N1711-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.

Documents

Technical documentation and resources