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SOT-23-3
Discrete Semiconductor Products

3LP01C-TB-E

Obsolete
ON Semiconductor

MOSFET P-CH 30V 100MA 3CP

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DocumentsDatasheet
SOT-23-3
Discrete Semiconductor Products

3LP01C-TB-E

Obsolete
ON Semiconductor

MOSFET P-CH 30V 100MA 3CP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification3LP01C-TB-E
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.43 nC
Input Capacitance (Ciss) (Max) @ Vds7.5 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]250 mW
Rds On (Max) @ Id, Vgs10.4 Ohm
Supplier Device PackageSC-59-3/CP3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

3LP01S Series

3LP01M is P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP for general purpose switching applications.

Documents

Technical documentation and resources