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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | 3LP01C-TB-E |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.43 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 250 mW |
| Rds On (Max) @ Id, Vgs | 10.4 Ohm |
| Supplier Device Package | SC-59-3/CP3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
3LP01S Series
3LP01M is P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP for general purpose switching applications.
Documents
Technical documentation and resources