
Discrete Semiconductor Products
BYC60W-1200PQ
ActiveWeEn Semiconductors
RECTIFIERS EFFICIENCY ENHANCED PT PLANAR RECT
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Discrete Semiconductor Products
BYC60W-1200PQ
ActiveWeEn Semiconductors
RECTIFIERS EFFICIENCY ENHANCED PT PLANAR RECT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC60W-1200PQ |
|---|---|
| Current - Average Rectified (Io) | 60 A |
| Current - Reverse Leakage @ Vr | 250 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 96 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-247-2 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BYC60 Series
Diode 1200 V 60A Through Hole TO-247-2
Documents
Technical documentation and resources
No documents available