Discrete Semiconductor Products
NX3020NAK,215
ActiveNexperia USA Inc.
MOSFETS 30 V, 180 MA DUAL N-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
NX3020NAK,215
ActiveNexperia USA Inc.
MOSFETS 30 V, 180 MA DUAL N-CHANNEL TRENCH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | NX3020NAK,215 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.44 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 1.06 W |
| Power Dissipation (Max) | 300 mW |
| Rds On (Max) @ Id, Vgs | 4.5 Ohm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NX3020NAK Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources