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30 V, single N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, single N-channel Trench MOSFET
30 V, single N-channel Trench MOSFET
| Part | Technology | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | N-Channel | TO-236AB | 0.44 nC | 2.5 V 10 V | 4.5 Ohm | 1.06 W | 300 mW | 30 V | Surface Mount | 150 °C | -55 °C | 13 pF | 20 V | 1.5 V | 200 mA | SC-59 SOT-23-3 TO-236-3 |