Discrete Semiconductor Products

PHE13003C,412

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BIPOLAR TRANSISTORS - BJT SILICON DIFFUSED POWER TRANSISTOR

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT SILICON DIFFUSED POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	PHE13003C,412

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	2.1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Operating Temperature	Supplier Device Package	Package / Case
WeEn Semiconductors PHE13009,127	Through Hole	8	2 V	100 µA	80 W	400 V	12 A	NPN	TO-220-3	150 °C	TO-220AB
WeEn Semiconductors PHE13005X,127	Through Hole	10	1 V	100 µA	26 W	400 V	4 A	NPN	TO-220-3 Full Pack Isolated Tab	150 °C	TO-220F
WeEn Semiconductors PHE13005X/01,127	Through Hole								TO-220-3 Full Pack Isolated Tab		TO-220F
WeEn Semiconductors PHE13005,127	Through Hole	10	1 V	100 µA	75 W	400 V	4 A	NPN	TO-220-3	150 °C	TO-220AB
WeEn Semiconductors PHE13007,127	Through Hole	8	350 mV	200 µA	80 W	400 V	8 A	NPN	TO-220-3	150 °C	TO-220AB
WeEn Semiconductors PHE13003C,126	Through Hole	5		100 µA	2.1 W	400 V	1.5 A	NPN	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	TO-92-3
WeEn Semiconductors PHE13003A,126	Through Hole	10	1.5 V	1 mA	2.1 W	400 V	1 A	NPN	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	TO-92-3
WeEn Semiconductors PHE13003A,412	Through Hole	10	1.5 V	1 mA	2.1 W	400 V	1 A	NPN	TO-226-3 TO-92-3	150 °C	TO-92-3	TO-226AA
WeEn Semiconductors PHE13009/DG,127	Through Hole	8	2 V	100 µA	80 W	400 V	12 A	NPN	TO-220-3	150 °C	TO-220AB
WeEn Semiconductors PHE13003C,412	Through Hole	5		100 µA	2.1 W	400 V	1.5 A	NPN	TO-226-3 TO-92-3	150 °C	TO-92-3	TO-226AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3

Technical documentation and resources

No documents available