Discrete Semiconductor Products

SIHH28N60E-T1-GE3

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MOSFET N-CH 600V 29A PPAK 8 X 8

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Discrete Semiconductor Products

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MOSFET N-CH 600V 29A PPAK 8 X 8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH28N60E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	129 nC
Input Capacitance (Ciss) (Max) @ Vds	2614 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	202 W
Rds On (Max) @ Id, Vgs [Max]	98 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division SIHH28N60E-T1-GE3	202 W	-55 °C	150 °C	98 mOhm	2614 pF	Surface Mount	10 V	600 V	PowerPAK® 8 x 8	8-PowerTDFN	N-Channel	129 nC	29 A	30 V	5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 2.99

General part information

N-Channel 600 V 29A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources