SIHH28 Series

Catalog

MOSFET N-CH 600V 29A PPAK 8 X 8

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division SIHH28N60E-T1-GE3	202 W	-55 °C	150 °C	98 mOhm	2614 pF	Surface Mount	10 V	600 V	PowerPAK® 8 x 8	8-PowerTDFN	N-Channel	129 nC	29 A	30 V	5 V	MOSFET (Metal Oxide)