Discrete Semiconductor Products

JANSR2N3700UB

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Microchip Technology

RH SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN

Discrete Semiconductor Products

JANSR2N3700UB

Active

Microchip Technology

RH SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANSR2N3700UB

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Grade	Military
Mounting Type	Surface Mount
Package / Case	4-SMD, No Lead
Power - Max [Max]	500 mW
Qualification	MIL-PRF-19500/391
Supplier Device Package	UB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANKCB2N3700-Transistor-Die Series

MIL-PRF-19500/391

Part	Qualification	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Supplier Device Package
Microchip Technology JANSF2N3700UB	MIL-PRF-19500/391	3-LCC	80 V	Military	1 A	10 nA	NPN	UB	50 hFE	500 mV	Surface Mount	500 mW
Microchip Technology JANTX2N3700UB/TR	MIL-PRF-19500/391	4-SMD No Lead	80 V	Military	1 A	10 nA	NPN	UB	50 hFE	500 mV	Surface Mount	500 mW
Microchip Technology JANTX2N3700UB	MIL-PRF-19500/391	3-SMD No Lead	80 V	Military	1 A	10 nA	NPN	UB	50 hFE	500 mV	Surface Mount	500 mW
Microchip Technology JANSR2N3700UB	MIL-PRF-19500/391	4-SMD No Lead	80 V	Military	1 A	10 nA	NPN	UB	50 hFE	500 mV	Surface Mount	500 mW
Microchip Technology JANSF2N3700	MIL-PRF-19500/391	TO-18-3 Metal Can TO-206AA	80 V	Military	1 A	10 nA	NPN	TO-18	100	500 mV	Through Hole	500 mW	TO-206AA
Microchip Technology JANKCB2N3700	MIL-PRF-19500/391	TO-18-3 Metal Can TO-206AA	80 V	Military	1 A	10 nA	NPN	TO-18	100	500 mV	Through Hole	500 mW	TO-206AA
Microchip Technology 2N3700		TO-18-3 Metal Can TO-206AA	80 V		1 A	10 nA	NPN	TO-18	50 hFE	500 mV	Through Hole	500 mW
Microchip Technology JANSP2N3700UB/TR	MIL-PRF-19500/391	3-SMD No Lead	80 V	Military	1 A	10 nA	NPN	UB	100	500 mV	Surface Mount	500 mW
Microchip Technology JANTX2N3700	MIL-PRF-19500/391	TO-18-3 Metal Can TO-206AA	80 V	Military	1 A	10 nA	NPN	TO-18	50 hFE	500 mV	Through Hole	500 mW	TO-206AA
Microchip Technology JANSF2N3700UB/TR	MIL-PRF-19500/391	3-LCC	80 V	Military	1 A	10 nA	NPN	UB	50 hFE	500 mV	Surface Mount	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	50	$ 40.57
Newark	Each	1	$ 40.57
		100	$ 37.67
		500	$ 36.23

Description

General part information

JANKCB2N3700-Transistor-Die Series

This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet