Discrete Semiconductor Products

NP100N04PUK-E1-AY

Active

MOSFET N-CH 40V 100A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	NP100N04PUK-E1-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7050 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max)	1.8 W
Power Dissipation (Max)	176 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Renesas Electronics Corporation NP100N04PUK-E1-AY	1.8 W	176 W	175 °C	7050 pF	120 nC	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	10 V	TO-263	N-Channel	20 V	MOSFET (Metal Oxide)	2.3 mOhm	40 V	100 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 100A (Tc) 1.8W (Ta), 176W (Tc) Surface Mount TO-263

Technical documentation and resources