NP100N04 Series
Manufacturer: Renesas Electronics Corporation
MOSFET N-CH 40V 100A TO263
| Part | Power Dissipation (Max) | Power Dissipation (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs (Max) | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 1.8 W | 176 W | 175 °C | 7050 pF | 120 nC | D2PAK (3 Leads + Tab) TO-263-4 TO-263AA | 10 V | TO-263 | N-Channel | 20 V | MOSFET (Metal Oxide) | 2.3 mOhm | 40 V | 100 A | Surface Mount |