Discrete Semiconductor Products

SIE868DF-T1-GE3

Obsolete

MOSFET N-CH 40V 60A 10POLARPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 60A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE868DF-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PolarPAK® (L)
Power Dissipation (Max)	125 W, 5.2 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	10-PolarPAK® (L)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIE868DF-T1-GE3	Surface Mount	40 V	2.3 mOhm	20 V	-55 °C	150 °C	10-PolarPAK® (L)	60 A	N-Channel	4.5 V 10 V	2.2 V	5.2 W 125 W	145 nC	6100 pF	MOSFET (Metal Oxide)	10-PolarPAK® (L)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Technical documentation and resources