SIE868 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 60A 10POLARPAK
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 40 V | 2.3 mOhm | 20 V | -55 °C | 150 °C | 10-PolarPAK® (L) | 60 A | N-Channel | 4.5 V 10 V | 2.2 V | 5.2 W 125 W | 145 nC | 6100 pF | MOSFET (Metal Oxide) | 10-PolarPAK® (L) |