Discrete Semiconductor Products

PSMN1R9-40PL127

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N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

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N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R9-40PL127

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	13200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	349 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Package / Case
Freescale Semiconductor - NXP PSMN1R9-40PL127	40 V	4.5 V 10 V	Through Hole	-55 °C	175 ░C	TO-220AB	1.7 mOhm	230 nC	13200 pF	150 A	2.1 V	N-Channel	20 V	349 W	MOSFET (Metal Oxide)	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	173	$ 1.74

General part information

N-Channel 40 V 150A (Ta) 349W (Ta) Through Hole TO-220AB

Technical documentation and resources