PSMN1R9 Series

Catalog

N-CHANNEL POWER MOSFET

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Package / Case
Freescale Semiconductor - NXP PSMN1R9-40PL127	40 V	4.5 V 10 V	Through Hole	-55 °C	175 ░C	TO-220AB	1.7 mOhm	230 nC	13200 pF	150 A	2.1 V	N-Channel	20 V	349 W	MOSFET (Metal Oxide)	TO-220-3