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TO-262-3 Long Leads
Discrete Semiconductor Products

FQI34P10TU

Obsolete
ON Semiconductor

MOSFET P-CH 100V 33.5A I2PAK

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TO-262-3 Long Leads
Discrete Semiconductor Products

FQI34P10TU

Obsolete
ON Semiconductor

MOSFET P-CH 100V 33.5A I2PAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFQI34P10TU
Current - Continuous Drain (Id) @ 25°C33.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds2910 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)3.75 W, 155 W
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device PackageTO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FQI3 Series

P-Channel 100 V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Through Hole TO-262 (I2PAK)

Documents

Technical documentation and resources

No documents available