FQI3 Series

Catalog

MOSFET P-CH 100V 33.5A I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Technology
ON Semiconductor FQI34P10TU	110 nC	Through Hole	60 mOhm	TO-262 (I2PAK)	10 V	3.75 W 155 W	P-Channel	33.5 A	25 V	2910 pF	-55 °C	175 ░C	4 V	100 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)
ON Semiconductor FQI32N20CTU	110 nC	Through Hole	82 mOhm	TO-262 (I2PAK)	10 V	3.13 W 156 W	N-Channel	28 A	30 V	2220 pF	-55 °C	150 °C	4 V	200 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)
ON Semiconductor FQI32N20CTU	110 nC	Through Hole	82 mOhm	TO-262 (I2PAK)	10 V	3.13 W 156 W	N-Channel	28 A	30 V	2220 pF	-55 °C	150 °C	4 V	200 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)