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TO-236AB
Discrete Semiconductor Products

PMV164ENER

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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TO-236AB
Discrete Semiconductor Products

PMV164ENER

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV164ENER
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.8 nC
Input Capacitance (Ciss) (Max) @ Vds110 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)5.8 W, 640 mW
Rds On (Max) @ Id, Vgs218 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.40
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.09
N/A 10938$ 0.43
Tape & Reel (TR) 3000$ 0.07
6000$ 0.07
9000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05

Description

General part information

PMV164ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.