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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 218 mOhm | 2.7 V | SC-59 SOT-23-3 TO-236-3 | 1.6 A | 5.8 W 640 mW | Surface Mount | 110 pF | N-Channel | 20 V | 3.8 nC | MOSFET (Metal Oxide) | 175 °C | -55 °C | 4.5 V 10 V | 60 V |