
Discrete Semiconductor Products
IPC100N04S51R2ATMA1
NRNDINFINEON
INFINEON’S IPC100N04S5-1R2 MOSFET FOR EFFICIENT POWER MANAGEMENT, HIGH PERFORMANCE, AND RELIABILITY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPC100N04S51R2ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7650 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 150 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm |
| Supplier Device Package | PG-TDSON-8-34 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPC100 Series
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Documents
Technical documentation and resources