Discrete Semiconductor Products

BSC011N03LSATMA1

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POWER MOSFET, N CHANNEL, 30 V, 230 A, 900 ΜOHM, TDSON, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 30 V, 230 A, 900 ΜOHM, TDSON, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	BSC011N03LSATMA1

Current - Continuous Drain (Id) @ 25°C	100 A, 37 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	96 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.1 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON BSC011N03LSATMA1	2.5 W 96 W	1.1 mOhm	MOSFET (Metal Oxide)	2.2 V	4.5 V 10 V	Surface Mount	20 V	4700 pF	8-PowerTDFN	72 nC	PG-TDSON-8-1	37 A 100 A	30 V	N-Channel	175 °C	-55 °C
INFINEON BSC011N03LSTATMA1	3 W 115 W	1.1 mOhm	MOSFET (Metal Oxide)	2 V	4.5 V 10 V	Surface Mount	20 V	6300 pF	8-PowerTDFN		PG-TDSON-8 FL	39 A 100 A	30 V	N-Channel	175 °C	-55 °C	48 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 37A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources