Discrete Semiconductor Products

STL8DN6LF3

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AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 22.5 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

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DocumentsSTL8DN6LF3 | Datasheet

Discrete Semiconductor Products

STL8DN6LF3

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STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 22.5 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

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DocumentsSTL8DN6LF3 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL8DN6LF3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	668 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	65 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

STL8DN6LF3 Series

Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package

Part	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Grade	Configuration	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Qualification	Drain to Source Voltage (Vdss)
STMicroelectronics STL8DN6LF3	8-PowerVDFN	30 mOhm	MOSFET (Metal Oxide)	20 A	2.5 V	PowerFlat™ (5x6)	Logic Level Gate	668 pF	Automotive	2 N-Channel (Dual)	13 nC	Surface Mount	175 °C	-55 °C	65 W	AEC-Q101	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	20971	$ 1.81
Mouser	N/A	1	$ 2.04
		10	$ 1.38
		100	$ 1.02
		500	$ 0.89
		1000	$ 0.86
		3000	$ 0.81
Newark	Each (Supplied on Cut Tape)	1	$ 2.61
		10	$ 1.92
		25	$ 1.79
		50	$ 1.65
		100	$ 1.52
		250	$ 1.42
		500	$ 1.32
		1000	$ 1.27

Description

General part information

STL8DN6LF3 Series

This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Documents

Technical documentation and resources

STL8DN6LF3 | Datasheet

Datasheet